| DOI | Resolve DOI: https://doi.org/10.1063/1.4832460 |
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| Author | Search for: Li, C. H.; Search for: Kioseoglou, G.; Search for: Petrou, A.; Search for: Korkusinski, M.1; Search for: Hawrylak, P.1; Search for: Jonker, B. T. |
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| Affiliation | - National Research Council of Canada. Security and Disruptive Technologies
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| Format | Text, Article |
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| Abstract | We report on a highly polarized emission from InGaAs/GaAs-quantum well light-emitting diodes in which we inject spin-polarized electrons from an Fe/Schottky contact. The emission spectra consist of the e1h 1 free exciton (FX) and a feature 12 meV below FX attributed to band-to-band (BB) recombination. The FX exhibits a maximum circular polarization of 22%, with a magnetic-field dependence characteristic of spin injection from Fe. The BB emission on the other hand exhibits a polarization that is strongly bias and temperature dependent, with intriguing magnetic-field dependence: The polarization exhibits a maximum of 78% at 2.5 T and 2 K, then decreases linearly with field and reaches -78% at 7 T, attributed to magnetic-field dependent spin relaxation in the presence of excess electrons. |
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| Publication date | 2013-11-19 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21270366 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | c6a0ca30-4733-4101-a5b5-40e1852c4c04 |
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| Record created | 2014-02-05 |
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| Record modified | 2020-04-22 |
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