| DOI | Resolve DOI: https://doi.org/10.1016/0038-1101(95)00354-1 |
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| Author | Search for: Pérez, E.; Search for: Bellani, V.; Search for: Zimmermann, S.; Search for: Muñoz, L.; Search for: Viña, L.; Search for: Koteles, E. S.1; Search for: Lau, K. M. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | Seventh International Conference on Modulated Semiconductor Structures, 10–14 July 1995, Madrid, Spain |
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| Abstract | We have studied the exciton dynamics and spin-flip processes in tensile strained GaAs1-yPy/Ga0.65Al0.35 As quantum wells as a function of phosphorous composition and well width. The strain introduced by the presence of phosphorous modifies the valence band structure. This strongly affects the characteristic times of exciton formation and polarization decay. However, the recombination time is essentially determined by the light- or heavy-character of the excitonic ground state. |
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| Publication date | 1996 |
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| In | |
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| Language | English |
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| NPARC number | 12327782 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | c7603e9a-3a81-4c08-aac1-9c57d7295e3f |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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