DOI | Resolve DOI: https://doi.org/10.1116/1.4794182 |
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Author | Search for: Lalany, Abeed; Search for: Tucker, Ryan Thomac; Search for: Taschuk, Michael Thomas; Search for: Fleischauer, Michael David1; Search for: Brett, Michael Julian1 |
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Affiliation | - National Research Council of Canada. Security and Disruptive Technologies
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Format | Text, Article |
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Subject | Cross-bridge kelvin resistors; Direct measurement; Electronic performance; Four-point probe techniques; Glancing Angle Deposition; Indium tin oxide; Longitudinal axis; Resistivity measurement; Deposits; Electric properties; Thin films; Tin oxides; Vapor deposition; Nanostructures |
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Abstract | Achieving the full potential of nanopillar electrode based devices, such as next-generation solar cells, catalyst supports, and sensors, requires axial resistivity measurements to optimize electronic performance. Here, the authors demonstrate a technique for direct measurement of the ensemble electrical properties of nanopillar thin films along the structures longitudinal axis. A cross-bridge Kelvin resistor architecture is adapted to accommodate an indium tin oxide (ITO) nanopillar thin film fabricated by glancing angle deposition (GLAD). As-deposited GLAD ITO nanopillars were found to have a measured resistivity of (1.1 ± 0.3) × 10-² Ω cm using our technique. Planar ITO films deposited at near normal incidence were found to have a resistivity of (4.5 ± 0.5) × 10-³ Ω cm, determined by the standard four-point-probe technique. These measurements demonstrate the viability of this modified technique for nanopillar characterization, and identify experimental limitations related to device size and edge defects. © 2013 American Vacuum Society. |
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Publication date | 2013 |
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In | |
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Language | English |
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Peer reviewed | Yes |
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NPARC number | 21271818 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | c864413d-2341-4e52-9245-11ee9d4fd91b |
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Record created | 2014-04-22 |
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Record modified | 2020-04-22 |
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