| DOI | Resolve DOI: https://doi.org/10.1139/p96-827 |
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| Author | Search for: He, J.-J.1; Search for: Koteles, Emil S.1; Search for: Davis, M.1; Search for: Poole, P. J.1; Search for: Dion, M.1; Search for: Feng, Y.1; Search for: Charbonneau, S.2; Search for: Piva, P.3; Search for: Buchanan, M.1; Search for: Goldberg, R.; Search for: Mitchell, I. |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
- National Research Council Canada
- National Research Council Canada. NRC Institute for National Measurement Standards
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| Format | Text, Article |
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| Conference | Seventh Canadian Semiconductor Technology Conference, Ottawa, Ontario, Canada, August 14-18, 1995 |
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| Abstract | The properties of band-gap-shifted InGaAsP/InP quantum-well waveguides were investigated. A 90 nm blue-shift of the band gap was obtained by phosphorus ion implantation followed by rapid thermal annealing. It was shown that the absorption constant at the original band edge was reduced from 110 to only 4 cm−1. No waveguide excess loss was observed due to the QW-intermixing process. Good electrical properties of the pin diode were also maintained. |
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| Publication date | 1996-12 |
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| Publisher | National Research Council Canada. NRC Research Press |
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| Language | English |
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| NPARC number | 12328853 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | cab223ec-59cd-48fd-beb8-19e2704cc21e |
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| Record created | 2009-09-10 |
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| Record modified | 2025-12-05 |
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