Electric field-tuneable crossing of hole Zeeman splitting and orbital gaps in compressively strained germanium semiconductor on silicon

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DOIResolve DOI: https://doi.org/10.1038/s43246-023-00431-x
AuthorSearch for: ORCID identifier: https://orcid.org/0000-0001-7757-2187; Search for: 1; Search for: 1; Search for: 2; Search for: 2ORCID identifier: https://orcid.org/0000-0002-7712-7187
Affiliation
  1. National Research Council of Canada. Advanced Electronics and Photonics
  2. National Research Council of Canada. Security and Disruptive Technologies
FormatText, Article
Subjectmaterials for devices; quantum physics
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PublisherSpringer Nature
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LanguageEnglish
Peer reviewedYes
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Record created2024-01-24
Record modified2024-01-29
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