| DOI | Resolve DOI: https://doi.org/10.23919/EuMIC.2018.8539946 |
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| Author | Search for: Du, Xuekun; Search for: Dhar, Sagar K.; Search for: Jarndal, Anwar; Search for: Storey, Craig1; Search for: Helaoui, Mohamed; Search for: Wingar, Simon1; Search for: Jiang you, Chang; Search for: Cai, Jingye; Search for: Ghannouchi, Fadhel M. |
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| Affiliation | - National Research Council of Canada. Advanced Electronics and Photonics
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| Format | Text, Article |
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| Conference | 2018 13th European Microwave Integrated Circuits Conference (EuMIC), September 23-25, 2018, Madrid, Spain |
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| Abstract | A novel reliable small signal model parameter extraction of asymmetric GaN-based Heterojunction Field Effect Transistors (HFETs) is proposed in this paper. An efficient systematic searching procedure based on pinch-off and cold weak-forward S-parameters has been developed to consider the asymmetric structure of GaN HFETs and find the optimal values of the gate and drain pad capacitances Cpg and Cpd. Considering that the depletion region extension is varied with the gate bias voltage V gs slightly even below pinch-off voltage, the obtained initial values of the extracted parameters are optimized by artificial bee colony (ABC) algorithm to improve the reliability of parameter extraction. The developed parameter extraction method shows excellent accuracy and reliability. The proposed procedure can be extended to asymmetric GaN devices with various process technologies. The developed approach has been validated by an asymmetric 0.15 μm GaN HFET over a wide range of bias conditions and frequencies. |
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| Publication date | 2018-11-19 |
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| Publisher | IEEE |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | ce344b46-59cf-4ae8-8afe-72dc80fb8f16 |
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| Record created | 2019-04-26 |
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| Record modified | 2020-03-16 |
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