| DOI | Resolve DOI: https://doi.org/10.1109/SENSORS43011.2019.8956890 |
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| Author | Search for: Walker, A. W.1; Search for: Pitts, O. J.1; Search for: Storey, C.1; Search for: Waldron, P.1; Search for: Flueraru, C.1 |
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| Affiliation | - National Research Council Canada. Advanced Electronics and Photonics
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| Format | Text, Article |
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| Conference | 2019 IEEE SENSORS, October 27-30, 2019, Montreal, QC, Canada |
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| Subject | III-V semiconductors; focal plane arrays; minority carriers; diffusion lengths; temperature; doping |
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| Abstract | Photodetectors and photovoltaic devices composed of direct bandgap semiconductor materials absorb visible to infrared wavelengths within a few micrometers of material. Minority carrier diffusion lengths in such materials are critical in designing these optoelectronic devices for particular applications. Minority holes in InGaAs on InP are reported between 0-100°C for doping concentrations ranging between non-intentionally doped (NID) to 5E16 cm⁻³. At room temperature, values range between 81±8 μm for the NID sample to 34±1 μm for 5E16 cm⁻³. These values appear constant over the temperature range explored, implying that lifetime and mobility balance out. |
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| Publication date | 2020-01-13 |
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| Publisher | IEEE |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | d01ec5b0-02ed-4a2f-9bb6-54f83e697cef |
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| Record created | 2021-02-24 |
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| Record modified | 2021-02-24 |
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