| DOI | Resolve DOI: https://doi.org/10.1063/1.361230 |
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| Author | Search for: Lenchyshyn, L. C.1; Search for: Liu, H. C.1; Search for: Buchanan, M.1; Search for: Wasilewski, Z. R.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | spectral linewidths; quantum well infrared photodetector; semiconductors; telecommunications engineering; leptons |
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| Abstract | We describe a 9 μm AlGaAs/GaAs asymmetric quantum well infrared photodetector with voltage tunable spectral bandwidth. A very narrow spectral response of 9.2 meV (0.6 μm) full width half maximum is observed for an applied electric field of 28 kV/cm. The linewidth quadruples when the bias polarity is reversed, with very little shift in the peak detection wavelength. This structure is based on a conventional intersubband photodetector modified by using AlGaAs barriers that are graded in Al content and by adding a thin AlGaAs confinement layer on one side of the well. The asymmetry in the barriers is shown to give rise to the dependence of the spectral linewidth on applied bias. As well, a series of unusually well-resolved and intense bound-to-continuum transitions are observed at low bias, that may indicate that the unique barrier shape also leads to enhanced electron interference effects at the well/barrier interfaces. |
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| Publication date | 1996-03-15 |
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| Publisher | AIP |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12338923 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | d0b5f8f5-322a-450c-a597-fa929f0c5734 |
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| Record created | 2009-09-11 |
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| Record modified | 2020-03-20 |
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