Ion transport and switching speed in redox-gated 3-terminal organic memory devices

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1149/2.0831412jes
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  1. NINT
FormatText
TypeArticle
Journal titleJournal of the Electrochemical Society
ISSN0013-4651
Volume161
Issue12
PagesH831H838
SubjectCarrier transport; Electrolytes; Field effect transistors; Polarons; Polyethylene oxides; Charging current; Device temperature; Electrolyte layers; Molecular memory devices; Organic memory devices; Oxide electrolytes; Rate-limiting process; Source and drain electrodes; Flash memory
Abstract
Publication date
PublisherThe Electrochemical Society
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LanguageEnglish
Peer reviewedYes
NPARC number21275588
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Record identifierd39aff29-dd9e-4e2b-a5c1-2a3c9f9e76ea
Record created2015-07-14
Record modified2016-05-09
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