| DOI | Resolve DOI: https://doi.org/10.1557/PROC-832-F5.1 |
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| Author | Search for: Baribeau, J.-M.1; Search for: Rowell, N. L.2; Search for: Lockwood, D. J.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
- National Research Council Canada. NRC Institute for National Measurement Standards
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| Format | Text, Article |
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| Conference | 2004 MRS Fall Meeting - Symposium F – Group IV Semiconductor Nanostructures, November 29-December 2, 2004, Boston, Massachusetts, USA |
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| Abstract | We review progress in the growth of Si1-xGex islands and Ge dots on (001) Si. We discuss the evolution of the island morphology with Si1-xGex coverage, and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural, and optical properties of Si1-xGex islands and review recent progress in the determination of their composition and strain distribution. We discuss various approaches currently being investigated to engineer Si1-xGex quantum dots and in particular control their size, density and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence nucleation and growth of Ge islands. |
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| Publication date | 2005 |
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| Series | |
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| Language | English |
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| Peer reviewed | Yes |
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| NRC number | NRC-INMS-1386 |
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| NPARC number | 12346434 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | d68264d1-295c-4dfa-aa85-b6b160e30613 |
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| Record created | 2009-09-17 |
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| Record modified | 2020-04-07 |
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