Comparison of the gain recovery times in low dimensional semiconductor amplifiers at 1.55 μm

DOI	Resolve DOI: https://doi.org/10.1109/LEOS.2006.279055
Author	Search for: Zilkie, A.; Search for: Meier, J.; Search for: E. Smith, P.; Search for: Mojahedi, M.; Search for: Aitchison, J.; Search for: Poole, P.¹ ; Search for: Allen, C.¹ ; Search for: Barrios, P.¹ ; Search for: Poitras, D.¹ ; Search for: Wang, R.; Search for: Rotter, T.; Search for: Yang, C.; Search for: Stintz, A.; Search for: Malloy, K.
Name affiliation	National Research Council Canada. NRC Institute for Microstructural Sciences
Format	Text
Type	Article
Proceedings title	2006 IEEE LEOS Annual Meeting Conference Proceedings
Conference	2006 IEEE LEOS Annual Meeting, October 29-November 2, 2006, Montreal, QC, Canada
ISBN	0-7803-9556-5 0-7803-9555-7
Pages	276–277
Abstract	We compare experimentally the gain recovery times of quantum dot, quantum dash, and quantum well amplifiers based on InP and operating at 1.55mum. The QD device gives the shortest recovery time of ~15 ps
Publication date	2006-10
Publisher	IEEE
Language	English
Peer reviewed	Yes
NPARC number	23001722
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Record identifier	d6d3c77f-77f3-4764-a4e7-e4fd1bb2f611
Record created	2017-03-21
Record modified	2017-03-21