| DOI | Resolve DOI: https://doi.org/10.1109/PHOSST.2013.6614486 |
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| Author | Search for: Mi, Z.; Search for: Dastjerdi, M.H.T.; Search for: Bianucci, P.; Search for: Tian, Z.; Search for: Zhong, Q.; Search for: Veerasubramanian, V.; Search for: Poole, P.J.1; Search for: Kirk, A.G.; Search for: Plant, D.V. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 2013 IEEE Photonics Society Summer Topical Meeting Series, PSSTMS 2013, 8 July 2013 through 10 July 2013, Waikoloa, HI |
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| Subject | Direct integration; Electronic component; Emission wavelength; High performance lasers; InAs quantum dots; Nanophotonic circuits; Nanoscale lasers; Telecom wavelengths; Optical communication; Semiconducting silicon; Semiconductor quantum dots; Silicon; Tubes (components); Semiconductor lasers |
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| Abstract | Low threshold, ultrahigh speed micro- and nanoscale lasers that can be directly integrated with optoelectronic and electronic components on a CMOS chip are in demand for future chip-level optical communications. In this regard, rolled-up semiconductor tube optical cavities, formed when coherently strained nanomembranes are selectively released from the host substrate, have emerged as a promising approach to realize high performance lasers on Si. 1-3 We have investigated the design, fabrication, and characterization of InAs/InGaAsP quantum dot tube lasers. We report the first demonstration of semiconductor tube lasers that can operate at the telecom wavelength (∼ 1.5 μm). Such devices can exhibit an extremely low threshold (∼ 1.26 μW) and multiple emission wavelengths. The direct integration of quantum dot tube devices with Si waveguides has also been demonstrated. © 2013 IEEE. |
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| Publication date | 2013 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21269577 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | ddb5420b-6199-4fe1-b9f7-b1cb34e4e10e |
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| Record created | 2013-12-13 |
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| Record modified | 2020-04-22 |
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