Understanding charge dynamics in silicon dangling bond structures for nanoscale devices

From National Research Council Canada

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Affiliation
  1. National Research Council of Canada. Security and Disruptive Technologies
FormatText, Article
ConferenceNanotech Conference and Expo 2012, June 18-21, 2012, Santa Clara, CA, USA
SubjectArtificial molecule; Atomic scale; Building blockes; Charge dynamics; Charge qubits; Computing architecture; Device architectures; Electron dynamics; External control; Ionic state; Nanoscale device; Polarization properties; Quantum-dot cellular automata; Si(001) surfaces; Silicon dangling bonds; Silicon surfaces; Dynamics; Electronic structure; Fluidics; Molecules; Nanowires; Scanning tunneling microscopy; Sequential machines; Nanotechnology
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LanguageEnglish
Peer reviewedYes
NPARC number21270288
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Record identifiere06a1785-d537-45cf-8018-bb881700683b
Record created2014-01-20
Record modified2020-04-21
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