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Silicon Nitride and Silicon Dioxide Thin Insulating Films (Sixth International Symposium)

From National Research Council Canada

EditorSearch for: Sundaram, K. B.; Search for: Deen, M. J.; Search for: Landheer, D.1; Search for: Brown, W. D.; Search for: Misra, D.; Search for: Allendorf, M. D.; Search for: Sah, R. E.
Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
FormatText, Book
Conference6th Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, 2001, Washington, D.C., USA
ISBN156677313x
Physical description286 p.
Abstract
A multitude of topics are discussed in this volume, such as film preparation, film and substrate interface analysis by novel techniques, as well as passivation, charge transport, and trapping. Also covered are tunneling phenomena and dielectric breakdown, defects, and impurities. Included as well are electrical, physical, chemical, and optical properties and multilayer dielectric layers, stacks, and interfaces. In addition, this volume discusses plasma processing, rapid thermal process oxidation, nitridation, isolation techniques, and radiation effects.
Publication date
PublisherElectrochemical Society
Series
  • Proceedings (Electrochemical Society) 2001-7.
LanguageEnglish
NPARC number12346631
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Record identifiere493d3d9-4afe-4f71-81a5-9b561d97f90a
Record created2009-09-17
Record modified2020-03-02
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