Chemical beam epitaxy grown 1.5µm lasers using compressively strained InGaAsP quantum wells
Chemical beam epitaxy grown 1.5µm lasers using compressively strained InGaAsP quantum wells
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Format | Text, Article |
Conference | Seventh Canadian Semiconductor Technology Conference, August 1995, Ottawa, Canada |
Publication date | 1996 |
In | |
NPARC number | 12328421 |
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Record identifier | e532fa70-4177-4e4f-b7d3-95c1b0ff0ec8 |
Record created | 2009-09-10 |
Record modified | 2020-03-20 |
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