Chemical beam epitaxy grown 1.5µm lasers using compressively strained InGaAsP quantum wells
Chemical beam epitaxy grown 1.5µm lasers using compressively strained InGaAsP quantum wells
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| Format | Text, Article |
| Conference | Seventh Canadian Semiconductor Technology Conference, August 1995, Ottawa, Canada |
| Publication date | 1996 |
| In | |
| NPARC number | 12328421 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | e532fa70-4177-4e4f-b7d3-95c1b0ff0ec8 |
| Record created | 2009-09-10 |
| Record modified | 2020-03-20 |
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