| Abstract | A chain reaction initiated at a dangling bond on a H-terminated Si(100)-3?1 surface leads to the creation of contiguous, linear multimolecular assemblies. In contrast to a similar growth process observed on the H-Si(100)-2?1 surface, the linear structures grow in the cross-row direction, rather than parallel to dimer rows. This process is enabled by both an uncommonly high rate of H atom diffusion, specifically in the cross-row direction, and a low barrier to H atom abstraction from dihydride sites. These results demonstrate that anisotropy inherent to the substrate can be imposed upon molecular assemblies formed via this "self-directed" growth process. |
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