| Abstract | Surface-analytical techniques are useful to characterize oxide films and to study oxide growth processes on metals and semiconductors. This paper will summarize some of our research on the nature and growth of anodic and thermal oxides on metals, alloys, and III–V semiconductors. Application of the techniques of secondary ion mass spectrometry, Auger electron spectroscopy, x-ray photoelectron spectroscopy, together with transmission electron microscopy is emphasized. Systems considered include iron, nickel, chromium, iron-chromium alloys, indium phosphide, gallium arsenide, and alumina formers (high-temperature materials: FeCrAl and Ni-Al and III–V heterostructures: AlGaAs, InAlAs, and InAlP). The often complementary information provided by the various techniques leads to a better understanding of the following: corrosion and oxidation processes, oxide growth mechanisms on an atomic scale, interfacial segregation phenomena, and the role of reactive elements like yttrium in modifying transport processes in oxides. In the case of semiconductors, preferential oxidation to form Al-containing oxides in III–V heterostructures can be used as a method to enhance device performance |
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