| DOI | Resolve DOI: https://doi.org/10.1109/NUSOD.2019.8807002 |
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| Author | Search for: Walker, A. W.1; Search for: Pitts, O.1; Search for: Storey, C.1; Search for: Waldron, P.1 |
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| Affiliation | - National Research Council of Canada. Advanced Electronics and Photonics
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| Format | Text, Article |
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| Conference | 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), July 8-12, 2019, Ottawa, ON, Canada |
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| Subject | III-V semiconductors; dark current; recombination; diffusion length; perimeter leakage |
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| Abstract | Numerical device model calibration of InGaAs/InP double-heterostructure p-I-n junctions is performed at room temperature using guarded test structures of various areas and investigating the contributions from minority carrier diffusion, depletion region generation and finally perimeter (shunt) leakage. The perimeter leakage is determined to be 0.5 pA/cm, whereas the depletion region contributes 2.2 nA/cm²; the bulk diffusion contribution is excluded via the guard ring but can be computed analytically to be 2.0 nA/cm². Reproducing the experimental test structures within the numerical modeling environment accurately reproduces the data based on calibrating the diffusion length and SRH lifetime. |
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| Publication date | 2019-08-22 |
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| Publisher | IEEE |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | ebf534f5-0513-46a6-b7cc-fcea0645dbe8 |
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| Record created | 2021-03-30 |
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| Record modified | 2021-03-30 |
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