| Download | - View accepted manuscript: Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions (PDF, 610 KB)
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| DOI | Resolve DOI: https://doi.org/10.1063/1.3240595 |
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| Author | Search for: Chang, H.-Y.; Search for: Tsybeskov, L.; Search for: Sharma, S.; Search for: Kamins, T.I.; Search for: Wu, X.1 ; Search for: Lockwood, D. J.1 |
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| Name affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text |
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| Type | Article |
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| Journal title | Applied physics letters |
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| ISSN | 0003-6951 |
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| Volume | 95 |
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| Issue | 13 |
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| Article number | 133120 |
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| Abstract | In crystalline, dislocation-free, Si/Ge nanowire axial heterojunctions grown using the vapor-liquid-solid technique, photoluminescence and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain in Si/Ge nanowires is observed from a temperature dependent study to be affected by the difference in Si and Ge thermal expansion. The conclusions are supported by analytical transmission lectron microscopy measurements. |
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| Publication date | 2009 |
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| Terms of use | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21276869 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction |
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Record identifier | ee4a74cd-330a-4477-aad2-204d173cc9a3 | | Record created | 2015-10-27 |
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| Record modified | 2019-03-06 |
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