Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions

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DOIResolve DOI: https://doi.org/10.1063/1.3240595
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Name affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Abstract
In crystalline, dislocation-free, Si/Ge nanowire axial heterojunctions grown using the vapor-liquid-solid technique, photoluminescence and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain in Si/Ge nanowires is observed from a temperature dependent study to be affected by the difference in Si and Ge thermal expansion. The conclusions are supported by analytical transmission lectron microscopy measurements.
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  • Applied physics letters 95, no. 13, 133120 (January 1, 2009).
LanguageEnglish
Peer reviewedYes
NPARC number21276869
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