| DOI | Resolve DOI: https://doi.org/10.1103/PhysRevLett.78.2441 |
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| Author | Search for: Houghton, D. C.; Search for: Aers, G. C.1; Search for: Rowell, N. L.2; Search for: Brunner, K.; Search for: Winter, W.; Search for: Eberl, K. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
- National Research Council of Canada. NRC Institute for National Measurement Standards
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| Format | Text, Article |
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| Abstract | We use a novel wafer bending technique to study band alignment under applied uniaxial stress in Si₁₋yCy/Si and Si₁₋xGex/Si₁₋yCy/Si heterostructures. We confirm a type I alignment for Si₁₋yCy/Si and report the first observation of an elastic strain induced type I to type II transition in Si₁₋yCy/Si quantum wells. Results for a Si₀.₈₄Ge₀.₁₆/Si₀.₉₉C₀.₀₁/Si structure support a type II transition between the SiGe valence band and the SiC conduction band. These results also indicate a conduction band offset of at most 65% of the band gap difference for Si₁₋yCy/Si with y = 0.5% or 1%. |
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| Publication date | 1997-03-24 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NRC number | NRC-INMS-1178 |
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| NPARC number | 12339207 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | f0c12f51-1037-47f4-b3a6-f4bf32b493c0 |
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| Record created | 2009-09-11 |
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| Record modified | 2023-05-16 |
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