| Download | - View accepted manuscript: Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells (PDF, 767 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1063/1.3548544 |
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| Author | Search for: Baranowski, M.; Search for: Syperek, M.; Search for: Kudrawiec, R.; Search for: Misiewicz, J.; Search for: Gupta, J.A.1; Search for: Wu, X.1; Search for: Wang, R.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | Band-bending effects; Carrier dynamics; Carrier relaxation; Charge separations; Experimental data; Hetero interfaces; Localized state; Low temperatures; Quantum well; Temporal change; Time-resolved photoluminescence; Semiconductor quantum wells |
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| Abstract | The carrier dynamics in type-II GaAsSb/GaAs quantum well (QW) is investigated by time-resolved photoluminescence at low temperature. A detailed analysis of the experimental data reveal a complex carrier relaxation scenario involving both delocalized and localized states. We show that the QW emission is controlled by the dynamics of the band bending effect, related to temporal changes in the spatial charge separation near the GaAsSb/GaAs heterointerface, whereas localized states play a significant role in the carrier relaxation/redistribution between QW states. |
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| Publication date | 2011 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21271287 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | f0ddbfa3-3d3d-416c-8473-198c067e05b0 |
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| Record created | 2014-03-24 |
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| Record modified | 2020-06-04 |
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