Energy relaxation by hot 2D electrons in AlGaN/GaN heterostructures: the influence of strong impurity and defect scattering

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1088/0268-1242/21/12/013
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: 1; Search for: 2; Search for: 1
Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
Publication date
In
NPARC number12744475
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifierf362286f-cf0a-4a74-bdbd-fb7203aa0c9b
Record created2009-10-27
Record modified2020-04-22
Date modified: