| DOI | Resolve DOI: https://doi.org/10.1063/1.116646 |
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| Author | Search for: Xu, D.-X.1; Search for: McCaffrey, J. P.2; Search for: Das, S. R.1; Search for: Aers, G. C.1; Search for: Erickson, L. E.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
- National Research Council of Canada. NRC Institute for National Measurement Standards
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| Format | Text, Article |
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| Subject | electrical properties; microstrip lines; morphology; nanostructures; platinum silicides; size effect; TEM |
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| Abstract | Electrical and structural properties of platinum monosilicide (PtSi) in deep submicron lines are reported. The sheet resistance of the silicide films was found to be rather independent of the linewidth down to dimensions as small as 0.15 µm. Plan-view and cross-sectional transmission electron microscopy was performed to study the structural properties of these films, including their gain structures and lateral growth. The insensitive nature of the electrical properties of the silicide films to the linewidths is correlated with their structural properties. |
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| Publication date | 1996-06-17 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12328644 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | f3673376-7be4-4f3c-91fc-be9d5d85441f |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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