Single atom gas field ion sources for scanning ion microscopy

DOI	Resolve DOI: https://doi.org/10.1007/978-3-319-41990-9_2
Author	Search for: Urban, Radovan¹; Search for: Wolkow, Robert A.¹; Search for: Pitters, Jason L.¹
Name affiliation	NINT
Format	Text
Type	Book chapter
Book title	Helium Ion Microscopy
Series title	NanoScience and Technology
ISSN	1434-4904 2197-7127
ISBN	978-3-319-41988-6 978-3-319-41990-9
Pages	31–61
Abstract	This chapter discusses fabrication and experimental evaluation of W(111) single atom tips (SATs) for gas field ion source applications. Firstly, a brief history of field ion microscopy (FIM) will be given since it will be heavily relied on throughout the text. We will discuss ion current generation in FIM and carry that knowledge over to fabricated SATs. Secondly, gas assisted etching and evaporation process will be discussed in detail. It will be shown that nanotip shape, and therefore SAT characteristics, can be controlled and modified to achieve desirable ion beam properties. Lastly, we will evaluate ion beam width as a function of tip voltage and temperature as examples of experimental efforts to better understand gas field ion source performance.
Publication date	2016
Language	English
Peer reviewed	Yes
NPARC number	23000868
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Record identifier	f38d8ea3-4d6d-42e3-9abc-8bc2e614daae
Record created	2016-10-26
Record modified	2019-01-31