| DOI | Resolve DOI: https://doi.org/10.1063/1.117106 |
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| Author | Search for: Labrie, D.1; Search for: Lafontaine, H.1; Search for: Rowell, N.1; Search for: Charbonneau, S.1; Search for: Houghton, D.1; Search for: Goldberg, R.D.; Search for: Mitchell, I.V. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | Heterostructures; Silicon; Germanium Silicides; Ion Implantation; Quantum Wells; Photoluminescence; Blue Shift; Strains; Ge and Si; ow-dimensional; mesoscopic; nanoscale and other related systems: structure and nonelectronic properties; Elemental semiconductors |
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| Abstract | A demonstration of quantum well intermixing using ion implantation in Si1-xGex/Si strained‐layer heterostructures is presented. The quantum‐well related photoluminescence lines of implanted and annealed samples are blue shifted by up to 40 meV relative to those measured in annealed‐only samples. Optical and structural qualities of the heterostructure remain high after implantation and annealing treatments. |
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| Publication date | 1996 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12328451 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | f798477c-9b2d-4e09-a342-ba40314e6b4b |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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