Photoluminescence and electroluminescence at ~ 1.5 µm from MBE grown Si[1-x]Ge[x] alloys doped with erbium
Photoluminescence and electroluminescence at ~ 1.5 µm from MBE grown Si[1-x]Ge[x] alloys doped with erbium
| Author | Search for: ; Search for: ; Search for: ; Search for: ; Search for: |
|---|---|
| Sponsor | Search for: MRS |
| Format | Text, Article |
| Conference | Electronic, optical and device properties of layered structures : proceedings of symposium B, 1990 Fall Meeting of the Materials Research Society, November 26-December 1, 1990, Boston, Massachusetts, USA |
| Language | English |
| NRC number | NRC-INMS-1109 |
| NPARC number | 8900764 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | f8e469c0-571b-433d-ba5a-50048190b367 |
| Record created | 2009-04-22 |
| Record modified | 2020-04-16 |
- Date modified: