| Download | - View accepted manuscript: Atomistic tight-binding theory of multiexciton complexes in a self-assembled InAs quantum dot (PDF, 735 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1103/PhysRevB.81.085301 |
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| Author | Search for: Zieliński, M.1; Search for: Korkusiński, M.1; Search for: Hawrylak, P.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | We present atomistic tight-binding theory of electronic structure and optical properties of InAs/GaAs selfassembled quantum dots. The tight-binding model includes zincblende symmetry, faceting, and sp3d5s* atomic orbitals accounting for interband and intervalley couplings. The equilibrium positions of atoms are calculated using valence force field method and modification of the tight-binding Hamiltonian due to strain is accounted for using Harrison’s law. The electronic and optical properties of multiexciton complexes are then determined by diagonalizing the many-body Hamiltonian for interacting electrons and holes using the configurationinteraction approach. The calculations of strain distribution approach 108 atoms while the electron and valence hole single-particle states are calculated by diagonalization of the Hamiltonian matrix with size on the order of 107. The dependence of predicted electronic and optical properties on InAs/GaAs valence-band offset and InAs absolute valence-band deformation potentials are described. The reliability of the atomistic calculations is assessed by comparison with results obtained from the effective bond orbital model and empirical pseudopotentials method. |
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| Publication date | 2010-02-01 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 17521912 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | f97518d6-a270-4e62-96d0-93c151dba910 |
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| Record created | 2011-03-29 |
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| Record modified | 2020-04-17 |
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