| DOI | Resolve DOI: https://doi.org/10.1002/1521-396X(200111)188:1<389::AID-PSSA389>3.0.CO;2-Q |
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| Author | Search for: Bardwell, J. A.1; Search for: Liu, Ying1; Search for: Rauhala, S.1; Search for: Bouwhuis, P.1; Search for: Marshall, P.1; Search for: Tang, H.1; Search for: Webb, J. B.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | The effect of a number of different treatments on the contact resistance for Ti/Al/Ti/Au (30/80/120/55 nm) contacts to Al0.3Ga0.7N (20 nm)/GaN HFET structures were investigated. The structures were grown by MBE. Neither preannealing of the surface at temperatures up to 1100 °C in N2, nor etching of the surface using chemically assisted ion beam etching (CAIBE) was effective in reducing the contact resistance. Both light CAIBE etching (≈5 nm) to partially remove the AlGaN layer, and deeper etching (≈50 nm and 100 nm) to remove the AlGaN and contact the GaN channel layer directly, resulted in a substantial increase in the measured contact resistance. The only treatment that was found to decrease the contact resistance was a brief wet etch in K2S2O8/KOH solution under 254 nm UV irradiation. A resist stabilization treatment was developed so that the process was self-aligned. The contact resistance in Ω mm was decreased by a factor of 1.7 for the optimum etch time. Scanning electron microscopy showed that the etching resulted in the formation of discrete holes perforating the AlGaN layer. |
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| Publication date | 2001 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12338914 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | fd521c7e-3409-42c8-96ff-93fd068d3ff5 |
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| Record created | 2009-09-11 |
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| Record modified | 2020-03-27 |
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