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Influence of crystalline Defects on Transport Properties of GaN Grown by Ammonia-Molecular Beam Epitaxy and Magnetron Sputter Epitaxy

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1007/s11664-000-0061-0
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Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
  2. National Research Council Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
Publication date
In
  • Journal of Electronic Materials 29, no. 3 (2000): 268–273.
NPARC number12339016
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Record identifierfeb9ff23-2696-4a30-b5f8-bc2059e4aabc
Record created2009-09-11
Record modified2020-03-26
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