| DOI | Trouver le DOI : https://doi.org/10.1002/1521-396X(200112)188:2<715::AID-PSSA715>3.0.CO;2-F |
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| Auteur | Rechercher : Tang, H.1; Rechercher : Bardwell, J. A.1; Rechercher : Webb, J. B.1; Rechercher : Rolfe, S.1; Rechercher : Moisa, S.1; Rechercher : Fraser, J.1; Rechercher : Raymond, S.1; Rechercher : Sikora, P.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | 68.55.Ac; 68.55.Jk; 81.15.Hi; S7.14 |
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| Résumé | The feasibility of selective area growth of GaN by ammonia-MBE has been demonstrated on SiC substrates. Under typical growth conditions for ammonia-MBE, GaN was unable to nucleate on the bare SiC surface. However, GaN nucleation could occur instantly if the SiC surface was first seeded with a thin (300 Å) AlN layer prepared by magnetron sputter epitaxy. Thus, GaN growth could occur selectively from a patterned, pre-deposited thin AlN seed layer, and effectively utilizing the exposed SiC surface as a pseudo mask. Evidence of lateral overgrowth was observed by scanning electron microscopy and X-ray diffraction studies. The selectively grown GaN patterns exhibited a strong tendency to form {10equation image1} or {10equation image2} type of facets with excellent smoothness. |
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| Date de publication | 2001-11-23 |
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| Maison d’édition | Wiley |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 12328929 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 688d2377-4664-46ac-a155-44be83424840 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-27 |
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