| DOI | Trouver le DOI : https://doi.org/10.1063/1.116342 |
|---|
| Auteur | Rechercher : Bardwell, J. A.1; Rechercher : Allegretto, E. M.1; Rechercher : Mason, B.1; Rechercher : Erickson, L. E.1; Rechercher : Champion, H. G.1 |
|---|
| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
|
|---|
| Format | Texte, Article |
|---|
| Sujet | anodization; atomic force microscopy; crystal doping; electrochemistry; etching; microstructure; oxidation; silicon; surface structure |
|---|
| Résumé | A procedure has been developed for delineation of lateral variations in the doping of Si(100). The procedure relies on the fact that the thickness of electrochemically grown oxide depends on the dopant density and type. By growing the oxide and then etching it off in cycles, the silicon is selectively removed according to the doping density. By using atomic force microscopy, the electrically effective n + , n, and p-type regions of the sample are delineated. |
|---|
| Date de publication | 1996-05-13 |
|---|
| Dans | |
|---|
| Langue | anglais |
|---|
| Numéro NPARC | 12338162 |
|---|
| Exporter la notice | Exporter en format RIS |
|---|
| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
|---|
| Identificateur de l’enregistrement | 042cac2e-faff-489c-8a57-a2a790088ee4 |
|---|
| Enregistrement créé | 2009-09-10 |
|---|
| Enregistrement modifié | 2020-03-20 |
|---|
