| DOI | Trouver le DOI : https://doi.org/10.1016/0168-583X(95)00752-0 |
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| Auteur | Rechercher : Charbonneau, S.1; Rechercher : Poole, P. J.1; Rechercher : Piva, P. G.1; Rechercher : Buchanan, M.1; Rechercher : Goldberg, R. D.; Rechercher : Mitchell, I. V. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | Ninth International Conference on Ion Beam Modification of Materials (IBMM'95), February 5-10, 1995, Canberra, Australia |
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| Résumé | Ion implantation induced Quantum Well (QW) intermixing using high energies (2 to 8 MeV As⁺ and P⁺) has been shown to be an effective technique for achieving spatially selective tuning of QW laser structures (InGaAs/GaAs and InGaAs/InP). Work illustrating the effects of ion dose, energy, current density and implant temperature is presented for the InGaAs/GaAs QW laser structure, using photoluminescence as a diagnostic tool to help optimise these parameters. This work is then extended to the InGaAs/InP QW laser structure where significant differences are observed, in particular concerning the ion implantation depth relative to the depth of the QWs. |
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| Date de publication | 1995-12-02 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12329126 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 05cb872e-e873-410c-ac01-79d025c4a6cf |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-29 |
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