DOI | Trouver le DOI : https://doi.org/10.1116/1.3657512 |
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Auteur | Rechercher : Adeyenuwo, Adegboyega P.; Rechercher : Stepanova, Maria1; Rechercher : Dew, Steven K. |
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Affiliation | - Conseil national de recherches du Canada. Institut national de nanotechnologie
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Format | Texte, Article |
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Sujet | A-density; dot diameter; electron dose; electron-beam exposure; fabricated structures; feature sizes; low voltages; nano-scale patterns; negative tones; single pixel; ultralow voltage; electron beam lithography; electron beams; fabrication; nanostructures; scanning electron microscopy; electrons |
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Résumé | The authors report a density multiplication process for nanoscale patterns composed of dots and lines using electron beam lithography with low voltage 1 keV exposures and cold development. The density doubling is achieved in a single exposure-development step using polymethylmethacrylate (PMMA) as the resist. PMMA exhibits a dual positive- and negative-tone behavior depending on the electron dose employed in this density multiplication process. Fabricated nanostructures are characterized via scanning electron microscopy and subsequent feature size measurements. After density doubling, the minimum dot diameter of an initially 80 nm pitch array of single pixel dots was measured as approximately 27 nm, and the minimum width in an initially 100 nm pitch array of lines was approximately 21 nm. Methodologies for controlling the dimensions of fabricated structures are discussed. Modeling of the electron beam exposure has been carried out using an original electron beam lithography simulator in order to understand the nominal yields of scission in PMMA required in order to achieve the density multiplication, and the results are discussed. © 2011 American Vacuum Society. |
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Date de publication | 2011 |
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Dans | |
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Langue | anglais |
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Publications évaluées par des pairs | Oui |
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Numéro NPARC | 21271935 |
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Exporter la notice | Exporter en format RIS |
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Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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Identificateur de l’enregistrement | 088347db-7cec-479d-89a3-968f693a5e3b |
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Enregistrement créé | 2014-05-07 |
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Enregistrement modifié | 2020-04-21 |
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