| DOI | Trouver le DOI : https://doi.org/10.1016/0039-6028(92)91189-I |
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| Auteur | Rechercher : Liu, H.; Rechercher : Steele, A.; Rechercher : Buchanan, M.; Rechercher : Wasilewski, Z. |
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| Format | Texte, Article |
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| Conférence | MSS-5, Fifth International Conference on Modulated Semiconductor Structures, July 8-12, 1991, Nara, Japan |
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| Résumé | Intersubband transitions in a coupled asymmetrical multiple quantum well (MQW) structure are studied using transmission and photocurrent spectroscopy in the long-wavelength infrared spectral region under an external bias. A single period of the MQW consists of one narrow GaAs well and one wide (Si-doped) GaAs well separated by a thin AlGaAs barrier; both wells are designed to have two quantum-confined states. The separation between adjacent periods is a wide AlGaAs barrier. With zero external bias, when the lower state (subband) in the wide well is populated with electrons and other states in both wells are empty, we observe a strong absorption feature near 9 μm due to the intersubband transition in the wide well. As the external bias is increased, electrons in the wide well are transferred to the (undoped) narrow well. This charge transfer results in a decreased absorption at 9 μm and the appearance of a new absorption feature near 6 μm which is due to the intersubband transition in the narrow well. Potential device applications are discussed. |
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| Date de publication | 1992 |
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| Maison d’édition | North-Holland |
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| Dans | |
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| Série | |
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| Langue | anglais |
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| Numéro du CNRC | NRC-INMS-674 |
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| Numéro NPARC | 8898895 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 0a4f07d7-3726-47ba-813f-a0ae2bbad7ec |
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| Enregistrement créé | 2009-04-22 |
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| Enregistrement modifié | 2024-02-13 |
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