| DOI | Trouver le DOI : https://doi.org/10.1016/j.tsf.2012.11.140 |
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| Auteur | Rechercher : Akbari-Sharbaf, A.; Rechercher : Baribeau, J.-M.1; Rechercher : Wu, X.1; Rechercher : Lockwood, D.J.2; Rechercher : Fanchini, G. |
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| Affiliation | - Conseil national de recherches du Canada. Technologies de l'information et des communications
- Conseil national de recherches du Canada. Science des mesures et étalons
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| Format | Texte, Article |
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| Sujet | Molecular beam epitaxy; Disordered silicon; Defects; Electron spin resonance; Microstructure |
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| Résumé | We investigate the role of disorder, stress and crystallite size in determining the density of defects in disordered and partially ordered silicon thin films deposited at low or moderate temperatures by molecular beam epitaxy. We find that the paramagnetic defect density measured by electron spin resonance (ESR) is strongly dependent on the growth temperature of the films, decreasing from ~ 2·1019 cm- 3 at 98 C to ~ 1·10 18 cm- 3 at 572 C. The physical nature of the defects is strongly dependent on the range of order in the films: ESR spectra consistent with dangling bonds in an amorphous phase are observed at the lowest temperatures, while the ESR signal gradually becomes more anisotropic as medium-range order improves and the stress level (measured both by X-ray diffraction and Raman spectroscopy) is released in more crystalline films. Anisotropic ESR spectra consistent with paramagnetic defects embedded in an epitaxial phase are observed at the highest growth temperature (572 C). |
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| Date de publication | 2013 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21269836 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 1185aa14-f6fc-4162-8687-597caedc8ad3 |
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| Enregistrement créé | 2013-12-13 |
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| Enregistrement modifié | 2020-04-22 |
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