| Autre titre | Electron tomography of Si and Er particles in SiOx film without missing wedge |
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| DOI | Trouver le DOI : https://doi.org/10.1017/S143192761006280X |
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| Auteur | Rechercher : Li, Peng1; Rechercher : Concepcion, Paul1; Rechercher : Wang, Xiongyao1; Rechercher : Malac, Marek1; Rechercher : Meldrum, Al1 |
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| Affiliation | - Conseil national de recherches du Canada
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| Format | Texte, Article |
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| Conférence | Microscopy and Microanalysis 2010, August 1–5, 2010, Portland, Oregon |
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| Résumé | Electron tomography (ET) in a TEM has been widely used to characterize materials at sub-10 nm spatial resolution. As any technique, ET has its limitations. One of the most serious problems is the “missing wedge” in Fourier space that arises from limited tilt angle range in a TEM. The most direct way to solve the problem is to tilt of sample over the full tilt range (-90° to 90°). The full tilt range ET was reported for example by Jinnai et. al., who analyzed polymer samples with metal nanoparticles. Here we report full tilt chemically selective ET of sub-10 nm Er clusters and Si crystallites embedded in SiOₓ matrix. The studied material is a possible candidate for fabrication of Sibased opto-electronic devices. |
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| Date de publication | 2010-07-01 |
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| Maison d’édition | Cambridge University Press |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 11976cdf-3393-4e33-b8ea-e43b4f6760ee |
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| Enregistrement créé | 2020-05-29 |
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| Enregistrement modifié | 2020-05-29 |
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