| DOI | Trouver le DOI : https://doi.org/10.1063/1.4773178 |
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| Auteur | Rechercher : Wei, L.M.; Rechercher : Gao, K.H.; Rechercher : Liu, X.Z.; Rechercher : Yu, G.; Rechercher : Wang, Q.W.; Rechercher : Lin, T.; Rechercher : Guo, S.L.; Rechercher : Wei, Y.F.; Rechercher : Yang, J.R.; Rechercher : He, L.; Rechercher : Dai, N.; Rechercher : Chu, J.H.; Rechercher : Austing, D.G.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | Anti-localization effects; Dephasing; Heating mechanisms; HgCdTe; HgCdTe films; Microwave field; Microwave power; Electron gas; Mercury compounds |
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| Résumé | The antilocalization effect in a compensated HgCdTe film is observed. With an applied microwave field, both the zero-magnetic-field conductance and the dephasing time are enhanced nonlinearly with microwave power. The observation concerning the dephasing time is inconsistent with a heating mechanism. Such behavior is also in contrast to the microwave-induced suppression of weak-antilocalization and dephasing time seen for a two-dimensional electron gas of the anodic-oxidized HgCdTe. The nonlinear increase in zero-magnetic-field conductance is consistent with a microwave-assisted-hopping mechanism. The increased dephasing time can be explained qualitatively by the microwave-assisted-hopping mechanism and a microwave-induced increase in the electron density. © 2013 American Institute of Physics. |
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| Date de publication | 2013 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21269990 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 123cb098-6d23-4590-bdc2-ee4caf861bdc |
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| Enregistrement créé | 2013-12-13 |
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| Enregistrement modifié | 2020-04-22 |
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