DOI | Trouver le DOI : https://doi.org/10.1117/12.452153 |
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Auteur | Rechercher : Lockwood, David J.1 |
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Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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Format | Texte, Article |
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Conférence | Optical Properties of Nanocrystals, 9-11 July 2002, Seattle, Washington, USA |
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Résumé | The many and diverse approaches to materials science problems have greatly enhanced our ability in recent times to engineer the physical properties of semiconductors. Silicon, of all semiconductors, underpins nearly all microelectronics today and will continue to do so for some time to come. However, in optoelectronics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Here we review a number of diverse approaches to engineering efficient light emission in silicon nanostructures. These different approaches are placed in context and their prospects for application in silicon-based optoelectronics are assessed. |
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Date de publication | 2002-11-05 |
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Dans | |
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Série | |
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Langue | anglais |
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Numéro NPARC | 12346474 |
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Exporter la notice | Exporter en format RIS |
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Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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Identificateur de l’enregistrement | 16d1632c-a8fb-40cc-8902-dd65947698be |
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Enregistrement créé | 2009-09-17 |
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Enregistrement modifié | 2020-03-30 |
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