| Résumé | Conventional electron microscopy, analytical electron microscopy, high resolution electron microscopy and high resolution SIMS have been used to investigate the effect of the reactive elements, Yand Zr, on the oxide scale formation on NiAl. Polycrystalline NiAl samples, doped with either 0. 1 wt% Yor 0.2 wt% Zr, were oxidized in air at 1200°C. 18O tracer experiments in conjunction with high resolution SIMS suggest that the reactive elements reduce the outward diffusion of cations. Energy dispersive X-ray spectroscopy on a dedicated STEM showed that the reactive elements segregate to the grain boundaries in the oxide scale and to the metal/oxide interface. The amount at the oxide scale grain boundaries was calculated to be 0.2 monolayers for both Zr and Y doped NiAl. The amounts of segregation were calculated to be 0.15 monolayers (Zr-doped) and 0.07 monolayers (Y-doped) at the metal/oxide interface. The presence of sulfur was detected in Y-rich particles in the NiAl close to the interface. |
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