Characterization of the location and interfacial states of gallium in gallium/MCM-41 composites

DOI	Trouver le DOI : https://doi.org/10.1016/j.micromeso.2004.11.005
Auteur	Rechercher : Zhang, Weiping¹; Rechercher : Ratcliffe, Christopher I.¹; Rechercher : Moudrakovski, Igor L.¹; Rechercher : Tse, John S.¹; Rechercher : Mou, Chung-Yuan; Rechercher : Ripmeester, John A.¹
Affiliation	Conseil national de recherches Canada. Institut Steacie des sciences moléculaires du CNRC
Format	Texte, Article
Sujet	gallium-MCM-41 nano-composites; porosimetry; PXRD; solid-state NMR; XPS
Résumé	A broad based approach, using nitrogen adsorption, X-ray diffraction, DSC, solid-state NMR and X-ray photoelectron spectroscopy, has been used to characterize a series of Ga/MCM-41 composite materials. Rather than filling the mesochannels of the MCM-41 it is found, through this combination of techniques, that most of the Ga is present in the spaces between the particles of MCM-41. High-angle XRD and 71Ga NMR indicate that at room temperature most of the Ga is in the liquid metal state. 29Si and 1H MAS NMR, and XPS reveal that at the Ga/MCM-41 interface the Ga reacts with silanol groups to form new Ga+ states like SiOGa, or bridging Si(OH)Ga hydroxyls.
Date de publication	2005-04-01
Dans	Microporous and Mesoporous Materials 79, nº 1-3 (1 avril 2005) : 195–203.
Langue	anglais
Numéro NPARC	12339047
Exporter la notice	Exporter en format RIS
Signaler une correction	Signaler une correction (s'ouvre dans un nouvel onglet)
Identificateur de l’enregistrement	21e3c2bd-99db-4b59-953f-ec60fd92dfb7
Enregistrement créé	2009-09-11
Enregistrement modifié	2020-04-07

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Date de modification :: 2026-04-20