| DOI | Trouver le DOI : https://doi.org/10.1117/12.237752 |
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| Auteur | Rechercher : Dubowski, Jan1; Rechercher : Bielawski, Mariusz2; Rechercher : Mason, B.; Rechercher : Mazumder, Jyotirmoy; Rechercher : Migliore, Leonard; Rechercher : Roychoudhuri, Chandrasekhar; Rechercher : Schaeffer, Ronald |
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| Affiliation | - Conseil national de recherches du Canada. Institut de technologie des procédés chimiques et de l'environnement du CNRC
- Conseil national de recherches du Canada. Institut de recherche aérospatiale du CNRC
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| Format | Texte, Article |
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| Résumé | The progress in manufacturing of integrated microelectronic and optoelectronic devices requires new technologies which would make possible printing of nanometer-size features and/or which would offer cost effective solutions in the fabrication of micrometer-size devices. Laser-induced direct (photoresist-free) patterning of materials has been recently investigated as a method that has some potential in that area. We have applied laser-assisted dry etching ablation for contact, proximity and projection mask lithography of III-V semiconductor films, quantum wells and superlattices. It has been shown that micrometer-size structures of those materials can be directly fabricated following the exposure to an excimer laser radiation in an atmosphere of chlorine diluted in helium. The results indicate that the process has the potential for the fabrication of high-quality quantum wire and quantum dot structures. |
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| Maison d’édition | SPIE |
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| Emplacement | San Jose, CA, USA |
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| Dans | |
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| Numéro NPARC | 12338929 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 255f7ed8-590c-4301-be59-2c06a5319538 |
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| Enregistrement créé | 2009-09-11 |
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| Enregistrement modifié | 2020-04-16 |
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