| Téléchargement | - Voir la version finale : Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well (PDF, 2.1 Mio)
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| DOI | Trouver le DOI : https://doi.org/10.1063/5.0086555 |
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| Auteur | Rechercher : Nakagawa, T.; Rechercher : Lamoureux, S.1; Rechercher : Fujita, T.Identifiant ORCID : https://orcid.org/0000-0002-4678-3069; Rechercher : Ritzmann, J.Identifiant ORCID : https://orcid.org/0000-0003-3322-8602; Rechercher : Ludwig, A.Identifiant ORCID : https://orcid.org/0000-0002-2871-7789; Rechercher : Wieck, A. D.Identifiant ORCID : https://orcid.org/0000-0001-9776-2922; Rechercher : Oiwa, A.Identifiant ORCID : https://orcid.org/0000-0001-5599-5824; Rechercher : Korkusinski, M.1Identifiant ORCID : https://orcid.org/0000-0002-2238-336X; Rechercher : Sachrajda, A.1Identifiant ORCID : https://orcid.org/0000-0001-8770-8025; Rechercher : Austing, D. G.; Rechercher : Gaudreau, L.1Identifiant ORCID : https://orcid.org/0000-0002-1929-2715 |
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| Affiliation | - Conseil national de recherches du Canada. Technologies de sécurité et de rupture
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| Bailleur de fonds | Rechercher : Japan Society for the Promotion of Science; Rechercher : Core Research for Evolutional Science and Technology; Rechercher : Moonshot Research and Development Program; Rechercher : Asahi Glass Foundation; Rechercher : Deutsch-Französische Hochschule; Rechercher : Deutsche Forschungsgemeinschaft; Rechercher : Berlin Center for Machine Learning; Rechercher : National Research Council of Canada |
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| Format | Texte, Article |
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| Sujet | quantum wells; doping; electronic transport; electrical properties and parameters; spin-orbit interactions; hall effect; epitaxy; quantum dots; g-factor |
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| Résumé | The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. Here, we demonstrate the operation of a few-electron double quantum dot circuit fabricated from a (110)-oriented GaAs quantum well. We estimate the in-plane electron g-factor from the profile of the enhanced inter-dot tunneling (leakage) current near-zero magnetic field. Spin blockade due to Pauli exclusion can block inter-dot tunneling. However, this blockade becomes inactive due to hyperfine interaction mediated spin flip-flop processes between electron spin states and the nuclear spin of the host material. The g-factor of absolute value ∼0.1 found for a magnetic field parallel to the direction [1¯10] is approximately a factor of four lower than that for comparable circuits fabricated from a material grown on widely employed standard (001) GaAs substrates and is in line with reported values determined by purely optical means for quantum well structures grown on (110) GaAs substrates |
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| Date de publication | 2022-04-07 |
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| Maison d’édition | AIP Publishing |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 268c0f45-b08c-493b-992d-2195f5d1cd3c |
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| Enregistrement créé | 2022-04-12 |
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| Enregistrement modifié | 2023-03-16 |
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