| DOI | Trouver le DOI : https://doi.org/10.1117/12.2004310 |
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| Auteur | Rechercher : Mnaymneh, K.; Rechercher : Frédérick, S; Rechercher : Dalacu, D.1; Rechercher : Lapointe, J; Rechercher : Poole, P.J.1; Rechercher : Williams, R.L.1 |
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| Affiliation | - Conseil national de recherches du Canada
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| Format | Texte, Article |
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| Conférence | Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VI, 5 February 2013 through 6 February 2013, San Francisco, CA |
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| Sujet | Compound semiconductors; Critical parts; Optically Active; Photonic circuitry; Photonic crystal membranes; Quantum photonics; Selective area epitaxy; Silicon-on-insulators; Atomic layer deposition; Deposition; Quantum chemistry; Refractive index; Technology; Photonics |
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| Résumé | Normally, the larger refractive index contrast of silicon-on-insulator (SOI) photonics used for transporting highly confined optical modes is not available in compound semiconductor systems because the optically active layer rests upon an epitaxial support layer having a similar refractive index. Here, a semiconductor-under-insulator (SUI) technology for compound semiconductor membrane photonic circuitry is presented. It will be shown that such a technology can facilitate the transport of highly confined optical modes in compound semiconductor systems and is anticipated to be a critical part of future scalable quantum photonics applications. © 2013 Copyright SPIE. |
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| Date de publication | 2013 |
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| Dans | |
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| Série | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21270618 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 2a2d27b2-5688-4627-8929-55fb6952a2ee |
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| Enregistrement créé | 2014-02-17 |
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| Enregistrement modifié | 2020-04-22 |
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