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SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithography

Par Conseil national de recherches du Canada

DOITrouver le DOI : https://doi.org/10.1186/1556-276X-8-139
AuteurRechercher : ; Rechercher : ; Rechercher : 1
Affiliation
  1. Conseil national de recherches du Canada. Technologies de sécurité et de rupture
FormatTexte, Article
SujetSML resist; Electron beam lithography; High-aspect-ratio nanolithography; Nanolithography; Nanofabrication; Lift-off; Preventing pattern collapse; Resists (85.40.Hp); Electron beam lithography (85.40.Hp); Nanolithography (81.16.Nd)
Résumé
A detailed process characterization of SML electron beam resist for high-aspect-ratio nanopatterning at high sensitivity is presented. SML contrast curves were generated for methyl isobutyl ketone (MIBK), MIBK/isopropyl alcohol (IPA) (1:3), IPA/water (7:3), n-amyl acetate, xylene, and xylene/methanol (3:1) developers. Using IPA/water developer, the sensitivity of SML was improved considerably and found to be comparable to benchmark polymethylmethacrylate (PMMA) resist without affecting the aspect ratio performance. Employing 30-keV exposures and ultrasonic IPA/water development, an aspect ratio of 9:1 in 50-nm half-pitch dense grating patterns was achieved representing a greater than two times improvement over PMMA. Through demonstration of 25-nm lift-off features, the pattern transfer performance of SML is also addressed. © 2013 Mohammad et al.
Date de publication
Dans
  • Nanoscale Research Letters 8, nº 1 (27 mars 2013) : 1–7.
Langueanglais
Publications évaluées par des pairsOui
Numéro NPARC21271838
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Identificateur de l’enregistrement2c700612-896e-4071-8248-e0882468ce7a
Enregistrement créé2014-04-23
Enregistrement modifié2020-04-22
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