Résumé | Photovoltaicinfrared detectors have significant advantages over photoconductive detectors due to zero bias operation, requiring low power and having reduced low frequency noise. They also exhibit no thermally assisted tunneling currents, leading to higher operating temperatures. p-type emitter/graded barrier GaAs/AlxGa1−xAs structures were tested as photovoltaicdetectors in the infrared region, operating under uncooled conditions and without an applied bias voltage. A photovoltaic responsivity of 450 mV/W was obtained with a detectivity (D*) of 1.2 × 10^6 Jones at a peak wavelength 1.8 μm at 300 K. Responsivity and D* increased to ∼1.2 V/W and 2.8 × 10^6 Jones, respectively, at 280 K. A non-linear improvement in responsivity was observed with increased emitter thickness. |
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