| DOI | Trouver le DOI : https://doi.org/10.1109/ISCS.2000.947172 |
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| Auteur | Rechercher : Fafard, S.1; Rechercher : Allen, C. N.1; Rechercher : McCaffrey, J. P.1; Rechercher : Finnie, P.1; Rechercher : Fraser, J.1; Rechercher : Wasilewski, Z. R.1 |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | 2000 IEEE International Symposium on Compound Semiconductors, 2-5 October 2000, Monterey, California, USA |
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| Résumé | Self-assembled quantum dots (QDs) capped with less than ~10 nm display optical memory effects lasting over a time-scale of several minutes. The interaction and charge transfer between zero-dimensional states and surface states are studied using near-surface QD ensembles with well-defined electronic shells. The influence of the temperature and cap thickness have been investigated. The inhomogeneous broadening of self-assembled InAs/GaAs QDs increases from ~30 meV to more than ~46 meV as the distance of the QDs from the surface is changed from 100 nm to 5.0 nm. Simultaneously, a decrease of the radiative recombination intensity by ~3 orders of magnitude, and a red-shift of ~65 meV are observed |
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| Date de publication | 2000 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12346788 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 34028883-4d2e-45ad-8d05-408d04edfec7 |
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| Enregistrement créé | 2009-09-17 |
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| Enregistrement modifié | 2020-03-26 |
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