| DOI | Trouver le DOI : https://doi.org/10.1117/12.828156 |
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| Auteur | Rechercher : Byrum, Laura E.; Rechercher : Ariyawansa, Gamini; Rechercher : Jayasinghe, Ranga; Rechercher : Dietz, Nikolaus; Rechercher : Perera, A. G. Unil; Rechercher : Matsik, Steven G.; Rechercher : Ferguson, Ian T.; Rechercher : Bezinger, Andrew1; Rechercher : Liu, Hui Chun2 |
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| Éditeur | Rechercher : Taylor, Edward W.; Rechercher : Cardimona, David A. |
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| Affiliation | - Conseil national de recherches du Canada. Électronique et photonique avancées
- Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | SPIE Optical Engineering + Applications, August 2, 2009, San Diego, CA, USA |
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| Résumé | Capacitance-voltage-frequency measurements on n+-GaN/AlxGa1-xN Heterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors were used to analyze the effects of Al fraction induced heterojunction barrier and its effect on the electrical characteristics at the heterointerface. The detector's IR threshold can be modified by changing the barrier Al concentration. A sample with an Al fraction of 0.1 shows a distinct capacitance step and capacitance hysteresis, which is attributed to N-vacancies and/or C-donor electron trap states located just above the Fermi level (200 meV) at the GaN/AlGaN interface, with activation energies of 149±1 and ~189 meV, respectively. A sample with an Al fraction of 0.026 showed negative capacitance and dispersion, indicating interface electron trap states located below the Fermi level (88 meV), most likely due to C-donor and/or N-vacancy with activation energies of 125±1 and 140±2 meV, respectively. Additional impurity related absorption centers were identified in both samples, however these shallow Si-donor sites (~30.9±0.2 meV) did not affect the capacitance as these states were located in the barrier layer and not in the vicinity of the Fermi level. The Al fraction in the barrier layer was found to significantly change the positions of the interface trap states relative to the Fermi level, resulting in the observed capacitance characteristics. |
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| Date de publication | 2009-08-27 |
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| Maison d’édition | Society of Photo-optical Instrumentation Engineers |
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| Dans | |
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| Série | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 23004477 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 3a912ac6-cf90-4390-b7b5-892e7ba721f8 |
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| Enregistrement créé | 2018-11-08 |
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| Enregistrement modifié | 2020-04-16 |
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