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Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy

Par Conseil national de recherches du Canada

DOITrouver le DOI : https://doi.org/10.1016/S0038-1101(00)00198-2
AuteurRechercher : 1; Rechercher : 2; Rechercher : 1; Rechercher : 1; Rechercher :
Affiliation
  1. Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
  2. Conseil national de recherches du Canada. Institut Steacie des sciences moléculaires du CNRC
FormatTexte, Article
Résumé
High-quality GaN/AlGaN high-electron-mobility transistors (HEMT) characterized by room temperature mobilities of ∼1000 cm2 V−1 s−1 and sheet electron densities in the range of 3×1012–2×1013 cm−2 have been grown by reactive molecular-beam epitaxy on insulating C-doped GaN template layers. Growth data and mobility values resulting from over 50 HEMT growth experiments on 2 in. diameter sapphire wafers are presented to show the remarkable overall high yield and reproducibility of the HEMT structures grown by this method. The use of insulating C-doped GaN buffer layers has greatly increased reproducibility of the device structures by ensuring device isolation through controlled carbon doping. Moreover, an undoped GaN channel layer of remarkably low defect density and high mobility can be grown on the C-doped GaN template with high reproducibility. Precise control of the growth temperature was key to achieving the high quality and reproducibility of the structures.
Date de publication
Dans
  • Solid-State Electronics 44, nº 12 (1 décembre 2000) : 2177–2182.
Numéro NPARC12328432
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Identificateur de l’enregistrement3b123aef-9e97-4138-8b49-b296529bd8ee
Enregistrement créé2009-09-10
Enregistrement modifié2020-03-26
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