Sélection de la langue

Gouvernement du Canada / Government of Canada

Recherche

Nanoscale plasmonic stamp lithography on silicon

Par Conseil national de recherches du Canada

Téléchargement
  1. (PDF, 1.4 Mio)
DOITrouver le DOI : https://doi.org/10.1021/acsnano.5b00312
AuteurRechercher : 1; Rechercher : 1; Rechercher : 1; Rechercher : 1; Rechercher : 1
Affiliation
  1. Conseil national de recherches du Canada. Institut national de nanotechnologie
FormatTexte, Article
SujetBlock copolymers; Copolymers; Electric fields; Films; Functional materials; Gold; Hydrosilylation; Lithography; Nanolithography; Nanotechnology; Semiconducting silicon; Semiconductor device manufacture; Silicon; Surface plasmon resonance; Block copolymer self-assembly; Directed self-assembly; Electron hole pairs; Functionalizations; Localized surface plasmon; Nano pattern; Nanoscale lithography; Semiconductor industry; Plasmons
Résumé
Nanoscale lithography on silicon is of interest for applications ranging from computer chip design to tissue interfacing. Block copolymer-based self-assembly, also called directed self-assembly (DSA) within the semiconductor industry, can produce a variety of complex nanopatterns on silicon, but these polymeric films typically require transformation into functional materials. Here we demonstrate how gold nanopatterns, produced via block copolymer self-assembly, can be incorporated into an optically transparent flexible PDMS stamp, termed a plasmonic stamp, and used to directly functionalize silicon surfaces on a sub-100 nm scale. We propose that the high intensity electric fields that result from the localized surface plasmons of the gold nanoparticles in the plasmonic stamps upon illumination with low intensity green light, lead to generation of electron-hole pairs in the silicon that drive spatially localized hydrosilylation. This approach demonstrates how localized surface plasmons can be used to enable functionalization of technologically relevant surfaces with nanoscale control.
Date de publication
Dans
  • ACS Nano 9, nº 2 (5 février 2015) : 2184–2193.
Langueanglais
Publications évaluées par des pairsOui
Numéro NPARC21275801
Exporter la noticeExporter en format RIS
Signaler une correctionSignaler une correction (s'ouvre dans un nouvel onglet)
Identificateur de l’enregistrement4036d732-6acd-437a-a79c-ea18086002db
Enregistrement créé2015-07-14
Enregistrement modifié2020-06-04
Date de modification :