| Téléchargement | - Voir la version finale : Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy (PDF, 4.5 Mio)
- Voir les données supplémentaires : Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy (PDF, 3.0 Mio)
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| DOI | Trouver le DOI : https://doi.org/10.3762/bjnano.11.119 |
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| Auteur | Rechercher : Croshaw, JeremiahIdentifiant ORCID : https://orcid.org/0000-0001-9164-1556; Rechercher : Dienel, ThomasIdentifiant ORCID : https://orcid.org/0000-0001-8146-8841; Rechercher : Huff, Taleana1Identifiant ORCID : https://orcid.org/0000-0002-6876-8265; Rechercher : Wolkow, Robert1 |
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| Affiliation | - Conseil national de recherches du Canada. Nanotechnologie
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| Format | Texte, Article |
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| Sujet | atomic force microscopy; hydrogen-terminated silicon; scanning tunnelling hydrogen microscopy; scanning tunnelling microscopy; surface metrology |
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| Résumé | The combination of scanning tunnelling microscopy (STM) and non-contact atomic force microscopy (nc-AFM) allows enhanced extraction and correlation of properties not readily available via a single imaging mode. We demonstrate this through the characterization and classification of several commonly found defects of the hydrogen-terminated silicon (100)-2 × 1 surface (H–Si(100)-2 × 1) by using six unique imaging modes. The H–Si surface was chosen as it provides a promising platform for the development of atom scale devices, with recent work showing their creation through precise desorption or placement of surface hydrogen atoms. While samples with relatively large areas of the H–Si surface are routinely created using an in situ methodology, surface defects are inevitably formed reducing the area available for patterning. By probing the surface using the different interactivity afforded by either hydrogen- or silicon-terminated tips, we are able to extract new insights regarding the atomic and electronic structure of these defects. This allows for the confirmation of literature assignments of several commonly found defects, as well as proposed classifications of previously unreported and unassigned defects. By combining insights from multiple imaging modes, better understanding of their successes and shortcomings in identifying defect structures and origins is achieved. With this, we take the first steps toward enabling the creation of superior H–Si surfaces through an improved understanding of surface defects, ultimately leading to more consistent and reliable fabrication of atom scale devices. |
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| Date de publication | 2020-09-07 |
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| Maison d’édition | Beilstein Institut |
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| Licence | |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro du CNRC | NRC-NANO-066 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 42b00806-3562-4f54-988b-63a51b3d3634 |
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| Enregistrement créé | 2021-02-04 |
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| Enregistrement modifié | 2021-02-04 |
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